Researchers within the Center advance modern microelectronics by engaging in research across a variety of domains:
The development of functional (low-dimensional) electronic materials, including atomically thin 2D materials, magnetic and widegap semiconductors, perovskite-based solar absorbers and non-volatile and phase-change materials
The exploration of beyond-complementary metal-oxide-semiconductor (CMOS) transistor concepts, including spintronic devices, tunneling transistors, plasmonic devices for terahertz communications, radiation-hard devices for space-based applications, hot-carrier solar cells and quantum devices for advanced metrology.
CMOS + X circuit concepts that enable functionality such as low-power operation, circuit non-volatility, and substantial area savings compared to CMOS
New York state's ambitious goals to achieve net-zero emissions by 2050 provide a common theme connecting many of these efforts.
Researchers in this area explore new material and device concepts, including approaches based on spintronics and magnetism to mitigate costs associated with computation.
Emergent widegap semiconductors – such as gallium oxide – are explored for applications in power electronics, including the harsh operational environments associated with electric-vehicles and with renewable power grids.
Researchers are developing new materials and device concepts for application to next-generation, high-efficiency, photovoltaic (solar) technologies. Interest lies in the development of solar cells for both terrestrial- and space-based applications.