Advanced GaN and novel III-N devices for THz electronics; transport in III-N hetero-structures; novel devices utilizing new materials functionalities; energy-efficient, nano-electronics in emerging materials
A UB research team has been awarded a $2.8 million semiconductor grant to advance semiconductor technology that will modernize the nation’s power grid.
An article on Engineering.com reports on UB research that may improve the design and efficiency of MOSFETs, or metal oxide semiconductor field-effect transistors. transistors and provide a breakthrough for electric vehicles.
All About Circuits reported on UB-led research that developed a paper-thin gallium oxide transistor that can handle more than 8,000 volts of electricity. The transistor could help make large and bulky batteries and power systems, such as those used in electric vehicles, smaller.
EE Power reports that UB researchers have developed a breakthrough in power electronics, a lateral gallium oxide-based transistor that can withstand more than 8,000 volts while being thinner than a sheet of paper.